Stress and Strain Engineering at Nanoscale in Semiconductor...

Stress and Strain Engineering at Nanoscale in Semiconductor Devices

Chinmay K. Maiti
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Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale.
Kategori:
Tahun:
2021
Edisi:
1
Penerbit:
CRC Press
Bahasa:
english
Halaman:
260
ISBN 10:
0367519291
ISBN 13:
9780367519292
Fail:
PDF, 37.69 MB
IPFS:
CID , CID Blake2b
english, 2021
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